[2404.15499]
Riccardo Bolzonella, Jerome Alexandre Alozy, Rafael Ballabriga, Martin van Beuzekom, Nicolò Vladi Biesuz, Michael Campbell, Paolo Cardarelli, Viola Cavallini, Victor Coco, Angelo Cotta Ramusino, Massimiliano Fiorini, Vladimir Gromov, Marco Guarise, Xavier Llopart Cudie, Shinichi Okamura, Gabriele Romolini, Alessandro Saputi, Arseniy Vitkovskiy
The timing performance of the Timepix4 application-specific integrated circuit (ASIC) bump-bonded to a $100\;μ\textrm{m}$ thick n-on-p silicon sensor is presented. A picosecond pulsed infrared laser was used to generate electron-hole pairs in the silicon bulk in a repeatable fashion, controlling the amount, position and time of the stimulated charge signal. The timing resolution for a single pixel has been measured to $107\;\textrm{ps}$ r.m.s. for laser-stimulated signals in the silicon sensor bulk. Considering multi-pixel clusters, the measured timing resolution reached $33\;\textrm{ps}$ r.m.s. exploiting oversampling of the timing information over several pixels.